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2.2.4 Raster-type electronic microscopy

The raster-type electronic microscope JEOL JSM-6610LV (Japan) shown in drawing 2.11 was applied to micromorphology examination. The gamut of magnifications concerns the basic performances of a microscope from? 5 to? 300 Open Companies, an accelerating voltage from 0,3 to 30 kv; the resolution of 2,5 nanometers in a fine vacuum mode (30 kv) and 4 nanometers in a rough vacuum mode.

Drawing 2.11 - Raster-type electronic microscope JEOL JSM-6610LV.

The basic requirement shown to electrospending samples, in REM, presence of a good electrical link with the holder of the sample for a sink of redundant charges is explored. In this plan of examination of samples of germanium do not represent problems, however problems can arise at examinations paratellurita, being a good dielectric.

The dusting of a thin film of platinum was applied to neutralisation of the superficial charges in the present operation on a surface of the sample. The second method of making of a conductor layer consisted in drawing on a surface of an electrospending ionic fluid. The author in unison C developers of a composition of the ionic fluid gains the patent on this expedient of preparation of the dielectric samples for examinations on REM [173]. Before arrangement of the explored sample in vacuum cabinet REM its surface moisten with a solution a hydrophilic not volatilised nonflammable nontoxical current-carrying ionic fluid tetrahlorferrat N-detsilpiridinija in organic solvent. Then carry out process of transpiration of solvent within 30 minutes at a room temperature, thereby providing an electrical link of a liquid current-carrying coat of the sample with the device case at its arrangement on a current-carrying subject little table [173].

2.2.5

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A source: Ivanova Alexandra Ivanovna. Micromorphology of a surface and dislocation structure of large-sized optical crystals of germanium and paratellurita. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2015. 2015

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