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Chapter 3. Examination of morphology of a relief, fraktalnyh properties of a surface and electrical performances of contact a sonde-sample for nanorazmernyh metal films on the dielectric substrates a method of scanning tunnel microscopy

Physically adequate configuration of the electronic plan of a scanning tunnel microscope plays important and in many respects spotting role in formation of images of a surface with the resolution of nuclear gauge.

Device approbation at tunnel contact between a scanning sonde and the sample can give both in examination of an initial surface, and to its mechanical infringement, and in some cases is a procedure of purposeful transport of one or groups of atoms [195]. Thus, use modelling of electrical performances of tunnel transition does testing of the electronic plan by trustier and increments repeatability of effects.

In operation [196] the theoretical approach allowing correctly to pick up the plan of electronic builders which is used some kind of as a simulator of tunnel contact is featured. Besides, with a view of practical use of an offered simulator and its application in the metrological plan the structure (the electronic plan) scanning tunnel microscope is in detail featured.

In a number of monographies and dissertations of foreign authors (we will score in particular [197]) examination BAX of contact a sonde-sample (there is even a special term tip spectroscopy) anticipate and are necessary for reception of the sufficient resolution at studying of a surface, an estimate of influence of noise and adjustment of corresponding filters in CTM.

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A source: Antonov Alexander Sergeevich. MORPHOLOGICAL PERFORMANCES And FRAKTALNYJ the ANALYSIS of METAL FILMS ON the DIELECTRIC SURFACES. The DISSERTATION on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2017. 2017

More on topic Chapter 3. Examination of morphology of a relief, fraktalnyh properties of a surface and electrical performances of contact a sonde-sample for nanorazmernyh metal films on the dielectric substrates a method of scanning tunnel microscopy:

  1. Chapter 1. The up-to-date state of examinations in the field of studying of morphological performances nanochastits and electrical performances of tunnel contact a sonde-sample methods nuclear, zondovoj and tunnel microscopy
  2. examination of electrical performances of tunnel contact a sonde-sample
  3. 3.3 Comparison of effects on examination fraktalnyh properties nanorazmernyh films of gold, argentum: atomno-power and tunnel microscopy
  4. about a procedure of preparation of samples for studying fraktalnoj dimensionality and electrical properties of contact a sonde-sample by means of a scanning tunnel microscope
  5. 3.1. Examination of morphology of a relief and fraktalnyh properties of the sample «gold on mica»
  6. examination of morphology of a relief and fraktalnyh properties of the sample «argentum on mica»
  7. computer modelling of process of interaction of a sonde of a power tunnel microscope with the sample on an example of system copper (sonde) - gold (sample)
  8. examination of morphology of a relief of the sample «chrome on a glass»
  9. nuclear power microscopy for examination of morphology of surfaces of thin films
  10. 4.2 Examination of a self-polarised state and local polarisation of thin films TSTS by a method of power microscopy of the piezoelectric response.