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comparison of the dielectric performances of the double-layer samples polarised in an opposite direction.

The comparative analysis of the frequency dependences of the real (fig. 4.15,) and imaginary (4.15,6) parts of a complex inductivity of double-layer samples Zl and Z2 has shown fig., that the behaviour ’ (/■) does not depend on a direction of polarisation of the sample concerning a relative positioning of stratums with different concentration of tin.

Distinction of values fво all frequency gamut takes place only: for sample Z2 value on frequency of 30 Hz makes 4560, on frequency of 1 MHz - 3560 while for sample Zl it is equal 3300 and 2000 accordingly. During too time the frequency dependence ε ' "(f) at a polarisation veering in the sample changes the basic fashion. So, sample Zl on dependence ε ' (f) has accurately expressed maximum corresponding to frequency ~ 27 kgts. Maximum presence allows to spot the most probable relaxation time as quantity, return to frequency on which the maximum ε" (f).v effect takes place is had: τ = 0.59 Io 5с On the frequency dependence ε ' (f) sample Z2 accurately expressed maximum misses, owing to what it is not obviously possible to spot the most probable relaxation time proceeding from dependence ε "(f), but sharp growth of the dielectric losses (~ in 7 times) on high frequencies is observed, i.e. at magnification of frequency from 70 kgts to 1 MHz. Probably maximum on a dependence drawing ε ' (f) for sample Z2 takes place in the field of higher frequencies, out of a limit of measurings spent in the present operation.

During the analysis of diagrammes f ' (f) (fig. 4.16) for sample Zl the most probable relaxation times are spotted: in the field of low frequencies of a spectrum

τ = 0.52 ■ lo^3 c 5 in high-frequency field of a spectrum t = 0.59 ■ lo^sс in the field of low frequencies for this sample the strong influence of conductivity on a direct current that is expressed in a linear relation ε ' (ε) (fig. 4.16 is found out. For sample Z2 (fig. 4.16,6) in the field of high frequencies on the diagramme ε ' (ε) by the observational effects can be spent extrapolation of an arc of a semicircle. It speaks about presence of relaxation process at corresponding frequency field, however the peak value ε according to which it is possible to spot quantity of the most probable relaxation time, is outside of field of the measured values that does not allow to spot the most probable relaxation time for the given process in the given frequency gamut. In low-frequency field of a spectrum the linear relation ε ' (ε) is observed, that testifies to the essential contribution of conductivity on a direct current in relaxation processes in low-frequency field of a spectrum.

Fig. 4.15. The frequency dependence of the real () and imaginary () parts of a complex inductivity for double-layer samples on the basis of ceramics BTS: 1 - Zl, 2 - Z2.

104

Fig. 4.16. Diagrammes ε ' (ε) for double-layer samples on the basis of ceramics BTS Zl (and Z2 ().

For both samples Zl and Z2 growth of conductivity with magnification of frequency of a variable electric field (fig. 4.17) is observed. At the same time, if on low frequencies conductivity of sample Zl inappreciablly above, than at Z2, that, since frequency 200 kgts, it already less, and on frequency of 1 MHz conductivity of sample Z2 10 times more, than at sample Zl.

Fig. 4.17. The frequency dependence of the real part of conductivity of double-layer samples Zl (a curve 1) and Z2 (a curve 2).

Having carried out the comparative analysis of the dielectric performances of double-layer samples Zl and Z2 it is possible to draw a deduction on influence of a cross direction of polarisation and a lapse rate of concentration of tin on

The dielectric properties of samples of ceramics BTS. Consisting of stratums with two various concentrations of tin.

4.2.2.2.

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A source: Shashkov Maxim Sergeevich. the DIELECTRIC RESPONSE of SCHISTOSE STRUCTURES ON THE BASIS OF Ď╚ĎAHAT└-ĐĎ└══└Ď└ BARIUM And TITANATA BISMUTH. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2018. 2018

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