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Deductions

1 chemical compounds and procedures of a chemical polish and the selective dislocation etching of the basic crystallographic surfaces of crystals of germanium and paratellurita Are optimised.

2. It is shown, that use REM with major depth of sharpness allows to spend observations of patterns of dislocation etching on not prepared surfaces of crystals, passing procedures of a mechanical and chemical polish, z C use of methods of the interference profilometrii, optical, raster-type and appearing through electronic microscopy explores micromorphology of surfaces of crystals of germanium and paratellurita. Quantitative is spent and quality standard terraschatoj structures of poles of dislocation etching.

4. In a microrelief of lateral surfaces of crystals of germanium methods of raster-type electronic microscopy and the interference profilometrii reveal a relief in the form of salients and troughs with the spatial periodicity 6 and 60 microns corresponding to continuances of time 0,3 with and 3 with. On the crystal of the germanium which has been grown up by a method of directional crystallisation, periodicities of unevennesses of a relief of two temporary and spatial gauges are found out: 3 with, 70 microns; 0,3 with, 7 microns.

5. Mechanisms of growth and the kinetic coefficients, characteristic for formation of sites of the crystal adjoining to a cylindrical lateral surface are estimated. It is shown, that the most part of these sites is generated on

To the normal mechanism with the kinetic coefficient k = 6∙10 ' 5mc "iK^i. The underload dislocation density is fixed on sites of crystals of germanium, C (X) IBCiCiBy і oshchp h to pyramids of growth of singular facets {111}, formed at level-by-level (tangential) growth, and makes 5 ∙ 103 Il O4см ’ 2. 6 It is offered and for the first time application of a photoelastic analysis for revealing of dislocations in crystals paratellurita by the Given method in paratellurite is realised the considerable volumes of a material with small - IO2см ' 2 - a dislocation density are found out. These volumes are formed by pyramids of growth of singular facets of three types with the underload specific surface energies

7. It is spent kristallomorfologichesky the analysis mnokristallov paratellurita, grown up by vytjagivanija from a melt in a direction by [110] method Chohralsky. Existence of exits on lateral surfaces bul facets (1Ї0), (110), (113), (113) and four facets {101} is observationally shown and confirmed by calculations.

8. Possibility of microprofiling of a surface of monocrystals paratellurita is observationally shown by a photolithography method. Lateral views of etching with continuances 10 - 50 microns are gained. The gained lateral views can be used for making of new types of polarisation diffraction gratings.

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A source: Ivanova Alexandra Ivanovna. Micromorphology of a surface and dislocation structure of large-sized optical crystals of germanium and paratellurita. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2015. 2015

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