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Germany

Now to revealing of poles of etching widely apply various chemical traviteli. In operation selective have been used both known traviteli, and their updatings.

Dislocation revealing on samples of the monocrystal germanium which has been grown up by a method Chohralsky in a direction [111].

Machining was carried out by means of abrasive materials. Measured surfaces of end faces of a monocrystal of germanium have been ground by abrasive powders M40, M28, MlO. SHlifovannaja the surface should not have obviously expressed risok, scratches, having chopped off. After 71

Abrasions the sample washed out in flowing water and dried a filtering paper and obtirochnym a material.

For a chemical polish of end faces of a monocrystal of germanium with orientation (Ill) the polishing solution of a following composition has been used:

• acid ftoristovodorodnaja (HF) - 50 volume parts,

• acid nitric (HNO3) - 50 volume parts,

• kalium bromic - 0,5 g/l a solution (for response acceleration).

Monocrystal end faces immersed in capacity with polishing solution so that all measured surface has been coated by a solution of a chemical compound from calculation of an intermixture of 10 ml on Icm2поверхности. Duration of a chemical polish made 4-5 minutes at a room temperature. A polish stopped at occurrence of brown steams. In order to avoid an oxidising the sample promptly transfer to a cup with water, carefully washed out in flowing water and exsiccate a filtering paper and obtirochnym a material.

For revealing of dislocations at end faces of a monocrystal of germanium (Ill) [58] used selective travitel a following composition:

• kalium zhelezosinerodistyj - 80 g,

• kalium gidrookis KOH - 120 g (or NaOH - 86)

• water distilled - 1000 ml.

The sample immersed in a bath with a cold solution which then heated up to boil temperature. Duration of etching in a boilling solution has made 2-3 minutes. After the termination of etching the sample carefully washed out in flowing water and dry a filtering paper or obtirochnym a material.

Revealing of dislocations by a method of the selective etching for Ge (100).

Preparation of samples of a monocrystal of germanium with the orientation (100), grown up by an expedient Chohralsky was carried out by two expedients.

1st expedient. A measured surface of end faces of a monocrystal of germanium ground diamond pastes 5.3 and 3.2. SHlifovannaja the surface should not
To have obviously expressed risok, scratches, having chopped off. After an abrasion the sample washed out in flowing water, wiped spirit and dried a filtering paper or obtirochnym a material.

For selective etching used the following composition travitelja (superoksol) [66]:

• acid ftoristovodorodnaja - 1 part (volume)

• hydrogen peroxide - 1 part (volume)

• water - 2 parts (volume)

The sample immersed in a bath with a cold solution. Duration of etching according to [66] makes 3-5 minutes. Our examinations show, that the satisfactory effect was gained after 9 minutes of etching. After the termination of etching the sample have carefully washed out in flowing water and have exsiccated a filtering paper and obtirochnym a material.

2nd expedient. A measured surface of end faces of a monocrystal of germanium ground abrasive powder MlO, then diamond pastes 5.3, 1.0. After an abrasion the sample wiped acetone, washed out the distilled water and dried by obduva air. For selective etching used the following composition travitelja [67]:

• acid hloristovodorodnaja - 1 part (volume)

• hydrogen peroxide - 1 part (volume)

• water - 4 parts (volume)

In [67] the recipe of etching of a surface of a crystal in a cold solution within 7 minutes has been offered. The given etching has not led to appreciable effect. To 70oC and magnification of duration of time of etching till 15 minutes dislocation poles have allowed to gain a heating of a solution.

Revealing of dislocations by a method of the selective etching for Ge (110).

In operation [62] selective has been offered travitel for the crystals of germanium oriented in a direction [110]. A deficiency of the given expedient is its duration (from 2 till 16 o'clock). We have applied the selective
travitel, featured in [58], having reduced duration of etching till 0,5-1 minutes. It is necessary to score, that in the up-to-date scientific literature contains very little given by results of the selective etching Ge [110], and practically there are no images of the gained poles of etching. The possible explanation is presented in operation [58]: on surfaces {110} because of a small difference in velocity of etching of a pole or are not formed or formed at all very small, trudnorazlichimye under a microscope.

2.2.6.2

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A source: Ivanova Alexandra Ivanovna. Micromorphology of a surface and dislocation structure of large-sized optical crystals of germanium and paratellurita. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2015. 2015

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