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a material for examinations

For working off of manufacturing techniques of detecting structures and the further working out of complex examination of their performances and performance of the observational operations on studying of electrophysical performances it is used monocrystal CdTe and CdZnTe foreign and a domestic production.

Samples of crystals CdTe and CdZnTe various manufacturers have been selected: Open Society "Гиредмет" (Russia), Joint-Stock Company "CrystalsNord" (Russia), źRedlen Technologies Inc.╗ (Canada), źAcrorad╗ (Japan), "RNIIRP" (Latvia).

Production of these firms, on the one hand, is accessible in the world and Russian market and, on the other hand, has either outstanding technical characteristics, or their prospects to reach. Crystals CdZnTe are grown up by a method zonnoj swimming trunks THM (źRedlen╗) and with use of the modified method Bridzhmena at a high pressure (źCrystalsNord╗). Crystals CdTe are grown up by a method zonnoj swimming trunks THM (źAcrorad╗) and the modified method Bridzhmena in Open Society "Гиредмет". The samples of crystals yielded in źCrystalsNord╗, źRedlen╗, źAcrorad╗ and Open Society "Гиредмет", had structure MPM with contacts from Au or Pt (on detectors "Acrorad"). At the necessity, some crystals subjected to an additional abrasion, a polish and chemical processing. On crystals CdTe of manufacture of Open Society "Гиредмет", contacts made chemical sedimentation of gold from zolotohloristovodorodnoj acids.

For manufacturing of structures crystals with high electrophysical performances (high cleanliness of a material, great volume of monocrystals with the homogeneous allocation of properties, high mobility and a lifetime of carriers) have been used.

Key parametres of crystals are given in table 4.2. In drawings 4.2 - 4.5 images of initial materials for working off of technology and manufacturing of detecting structures are given.

Table 4.2. Key parametres of initial materials

The number of the sample The number of the detector/type proizvodiyotel The size,

MM? MM

Thickness,

MM

Ud. soprotivyolenie r, a sm Ohm (μτ) e cm2∕B (μτ) p cm2∕B Voltage the register, photopeak

(Cs, Tkomh), IN

1 0903-1302-33 06 p-i-n 5? 10 3,0 700
2 0903-1302-34 07 p-i-n 5? 10 3,0 600
3 0903-1302-35/36 Acrorad 5? 10 3,0 ~2 IO9 2-Ю ' 3 —1,2 IO 4 50
4 0903-1302-49/50 10 p-i-n 5? 5 3,0 800
0903-1302-41 05 MPM 5? 10 3,0 50
0903-1302-39/40 3x3 3,0 50
19728/1 CdZnTe 08 p-i-n Redlen 10 X 10 1,0 ~2∙101 12 ∙ IO ' 3 —1,2 IO 4 700
19728/2 CdZnTe 04 MPM Technologies 10 X 10 2,0 480
19785CdZnTe 09 p-i-n Inc 10 h 10 5,0 700
1 KT 10-24 № 11-6 7x7 1,24 1,5 IO9 1,3 IO ' 3 -IlO ' 4 75
2 № 11-10 7x7 1,27 2-JU9 9-Ю ' 4 -IlO ' 4 75
3 № 11-14 5x5 1,0 5-JU9 1,2 10 3 -IlO ' 4 50
4 ТНМ-2 № 14-7 4x4 0,87 1-JU10 4,5 IO ' 4 - 75
5 № 14-13 4x4 1,22 9-JU9 2-Ю ' 4 - 100
6 ТНМ-6 № 1-13 4x4 1,05 5-JU8 5-Ю ' 4 - 75
7 № 15-13 4x4 1,52 1,2 IO9 7,6 ∙ IO ' 4 -IlO ' 4 75
8 № 4-13 5x5 1,47 1,3 IO9 8,3 IO ' 4 -IlO ' 4 50
9 № 9-13 OPEN SOCIETY

źG a subject╗

5x5 1,85 1,3 IO9 5-Ю ' 4 -IlO ' 4 75
10 KTSTS 10-27 № 4-14 7x7 1,12 2-JU9 1,3 IO ' 3 5,1 TH ' 5 50
11 KT 10-49 №5-11 01 MPM 5x5 2,58 3-JU9 8-Ю ' 4 1,5 IO ' 4 210
12 ТНМ-5 № 4-14 4x4 1,38 3,5 IO8 9-Ю ' 4 5,7 ∙ IO ' 5 50
13 № 9-14 4x4 1,4 3,2 ∙ IO8 9,2 ∙ IO ' 4 6,5 IO ' 5 50
14 № 13-14 4x4 1,29 3,5 IO8 9,5 IO ' 4 4,8 ∙ IO ' 5 50
15 KTST 07-64 № 1 3x3 1,45 4-JU8 3-Ю ' 4 - 150
Plates
1 KT 10-24 № 3 0 40 2,5 -IlO9 -IlO ' 3 -IlO ' 4
2 KTSTS 10-41 №8 02 MPM 0 40 3,0 -3-JU9 -5 IO ' 4 -IlO ' 4 300
3 KT 09-11 №6 03 MPM 0 40 3,0 -6-JU8 -5 IO ' 4 -IlO ' 4 350
4 KT 10-43 № 1 0 40 3,0 > 1 IO9 -IlO ' 3 -IlO ' 4
5 KTST 11-04 №6 0 40 2,5 -2-JU9 ~4 ∙ IO ' 4 -7TH ' 5

Drawing 4.2. Monocrystal CdTe firms "Асгогаё" for manufacturing

Detecting structures

Drawing 4.3.

Monocrystal CdZnTe firms "Redlen" for

Manufacturing of detecting structures

Drawing 4.4. Monocrystal CdTe RNIIRP for working off of technology and modes abrasions of detecting structures are sharp also

Drawing 4.5. Monocrystal CdTe Open Society "Гиредмет" for manufacturing

Detecting structures

4.3.

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A source: SMIRNOV Alexander Aleksandrovich. Electrophysical performances of detecting structures on the basis of CdTe and CdZnTe. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2018. 2018

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