nonsingle dispersion

Electrons and positrons, transiting through substance, are diffused on Coulomb potentials of kerns and electrons. It leads to major number of processes of dispersion with very small diversion from an initiating trajectory.

In firm or liquid materials the number of certificates of dispersion is very great, therefore detailed modelling of each certificate of dispersion extremely inefficiently and besides leads to accumulation of a computing error. Therefore the method of the integrated collisions consisting in evaluation of change of parametres of an electron after passage is usually applied to numerical calculations is considerable bolshego distances, than a path length. For modelling of parametres of the electron which has transited the given distance, the known solutions gained in the theory of nonsingle dispersion in approach of the unlimited homogeneous environment are used. Lewis's [30] solution which allows to calculate angular and a spatial distribution of electrons as a result of dispersion is most often applied. Besides, application the mixed methods, in which recently find
The rigid certificates of dispersion are modelled individually, and the method of the integrated collisions is applied to the "soft" dispersion.

The account of nonsingle dispersion of electrons is extremely important for modelling of run of electrons in the semiconductor and substantially spots a charge spatial distribution in the detector.

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A source: SMIRNOV Alexander Aleksandrovich. Electrophysical performances of detecting structures on the basis of CdTe and CdZnTe. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2018. 2018

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