objects of examinations
Objects of examination in operation were ferroelectric films tsirkonata titanata the lead, conductances [62] possessing i-type which have been made double-reduction (ex-situ) by an expedient by means of high-frequency (VCH) magnetronnogo pulverisations in FTI of A.F.Ioffe.
Films were besieged on substrates at temperature 150 °C from ceramic targets of composition PbZr0,54Ti0,46O3 + 10 pier. % PbO [81 - 83]. Use redundant oksida lead is necessary for completion of atoms of lead from - for its high volatility at the subsequent high-temperature otzhige. As substrates were used - the oriented plates of silicon on which the titanic adhesiveness underlayer and platinum electrodes of 80 nanometers have prestressly been superimposed by thickness. The thin-film ferroelectric condenser was isolated from silicon by a layer of dioxide of silicon (SiO2) in the thickness of 300 nanometers. The thickness of besieged stratum PZT made 500 nanometers. For formation of the film possessing ferroelectric properties, additional temperature processing which led to formation perovskitovoj structures was required. Therefore after process of sedimentation of a film were exposed otzhigu at temperatures TSINT = 540 - 570 °C within 1 hour. The temperature otzhiga is considered as temperature of synthesis of explored films. On the free surface of a film platinum electrodes of 80 nanometers and the area 0,01 - 0,1 мм2 [81 - 83] were superimposed by thickness.Redundant oksid lead PbO, used for maintenance stehiometrii at high-temperature otzhige, frequently
rassredotachivaetsja in mezhkristallitnom space and on film interfaces. Inserts PbO can strongly change structure and properties of films [84 - 87]. For magnification of the sizes perovskitovyh grains and removal
54 redundant PbO often spend secondary rekristallizatsiju perovskitovoj phases by means of additional otzhiga at major temperatures [84, 86, 87].
In drawing 2.1 dependences of the content of lead on the synthesis temperature, the numbers of atoms Pb/Ti presented by a relation for the explored films PZT synthesised at unitary otzhige () are given and at rekristallizatsii ().
Drawing 2.1. Change of a relation of number of atoms Pb/Ti, with growth of temperature of crystallisation in films PZT in the thickness of 500 nanometers crystallising immediately in a phase perovskita (), and in the films undergoing rekristallizatsiju (). The dotted line scores reduction of the content of lead [88].
From the analysis of drawing 2.1, and, authors [88] have spotted, that with growth of temperature of synthesis change of the content of lead in films reached 20 %. For the films undergoing rekristallizatsiju, reduction of the content of lead, was estimated in 8 %.
In drawing 2.2 the image of film PZT representing polycrystalline sferolitovye formations is presented. By authors [88] it is informed, that for films PZT synthesised at unitary otzhige, with magnification of quantity of lead (TSINT = 540 - 560 °C) the traversal size perovskitovyh blocks decreased with 20 - 30 to 5 - 15 microns. At reduction of quantity of lead in a film (TSINT> 560 °C), the size sferolitov increased again to 20 - 30 microns.
Drawing 2.2. The images of film PZT gained on a raster-type electronic microscope in a mode of takeoff of secondary electrons with the plus voltage on
To net [88].
2.2.
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