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technological aspects of manufacturing of detecting structures on the basis of crystals

For examination of parametres of monocrystals in the form of detecting structures in operation the technological procedure of manufacturing of structures has been developed and approved.

Detecting structures made from high-resistance CdTe and CdZnTe according to the technological operations given in table 4.1.

Table 4.1.

Technological operations of manufacturing of detecting structures from CdTe, CdZnTe
№ p/p Technological operation Notes
1. It is sharp an ingot/washer on separate crystals:

- Ingot/washer fixing on opravke pitseinom;

- The group is sharp a string with a diamond coat;

- Heating of a substrate and dismantle of crystals.

The small-sized machine tool abrasive wire are sharp AJITEK-13 009
2. Otmyvka crystals from the heels pitseina:

- Keeping in nagretom chetyryohhloristom carbon;

- Wash in water;

- The visual control of a crystal.

3. Numbering of crystals.
4. Measuring of the geometrical sizes of a crystal.
5. Removal by a method of an abrasion of flaws are sharp a crystal:

- Label on grinding opravku;

- Abrasion;

- otmyvka in chetyryohhloristom carbon and wash in deionizovannoj to water.

6. Measuring of the geometrical sizes.
7. Reduction of the sample in the given size an abrasion method:

- Label of the sample on grinding opravku;

- Removal of a redundant thickness;

- Wash in a water soap solution;

- otklejka the sample;

- Wash in chetyryohhloristom carbon and in deionizovannoj to water;

- The control of the sizes.

The desktop machine tool

LS2P.04

8. Polish:

- Polish of facets;

- Polish of facets;

- Polish of planes.

The desktop machine tool

LS2P.04

9. Otmyvka after a polish:

- Water soap solution

- Wash in deionizovannoj to water

- otmyvka in chetyryohhloristom carbon.

10. Formation of contacts. Indium and gold thermodiffusion
AND. The control of electrophysical performances:

- Measuring voltampernoj performances;

- Measuring of a peak spectrum.

Spectrometer on datum

ЦСУ-Н-1К


For manufacturing of detecting structures selected an initial material with high electrophysical performances (low concentration of residual impurities, high cleanliness of a material, great volume of monocrystals with the homogeneous allocation of properties, high mobility and a lifetime of carriers), grown up by a method of a moving heater with neutralisation chlorine (THM), manufactures of firms "Acrorad" (division of the Japanese energy corporation) and źRedlen Technologies Inc.╗ (Canada).

Used monocrystals for manufacturing of detecting structures had following performances.

Monocrystals CdTe: a specific resistance r = IO9Омсм; a lifetime of carriers not less IO ' 6с; product of mobility of electrons and electron defects on their lifetime (1,0 - 2,4) ∙10 ' 3cm2∕B and (1,0 - l, 4) ∙10 ' 4cm2∕B, accordingly. Now it is the best crystals CdTe which the up-to-date technology allows to gain.

Monocrystals CdZnTe: a specific resistance p = 2∙101 ░ a sm Ohm; product of mobility of electrons and electron defects on their lifetime 1,2 ∙ IO ' 2cm2∕Bи 1,2 ∙ IO ' 4cm2ZB, accordingly.

All samples had identical crystallographic orientation - contacts in a plane (111). From an initial crystal cut out rectangular parallelepipeds which then ground and polished, for the purpose of removal of the broken stratum after are sharp. The characteristic sizes of detecting structures: a thickness of 1-3 mm, length and breadth of 2-10 mm. For maintenance ploskoparallelnosti the explored detecting structures gained at processing of crystals on soft polirovalnikah, we had been made changes to technological process - preparations of detecting structures pasted on metal opravku with plane-parallel facets and polished on a glass.

4.1.2.

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A source: SMIRNOV Alexander Aleksandrovich. Electrophysical performances of detecting structures on the basis of CdTe and CdZnTe. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2018. 2018

More on topic technological aspects of manufacturing of detecting structures on the basis of crystals:

  1. working out of a procedure of manufacturing of detecting structures
  2. CHAPTER 4. EXAMINATION OF ELECTROPHYSICAL PERFORMANCES OF DETECTING STRUCTURES ON THE BASIS OF CdTe, CdZnTe
  3. SMIRNOV Alexander Aleksandrovich. Electrophysical performances of detecting structures on the basis of CdTe and CdZnTe. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2018, 2018
  4. Smirnov Alexander Aleksandrovich. ELECTROPHYSICAL PERFORMANCES of DETECTING STRUCTURES ON THE BASIS OF CdTe and CdZnTe. The dissertation AUTHOR'S ABSTRACT on competition of a scientific degree of the candidate of physical and mathematical sciences. Tver - 2018, 2018
  5. Transport performances of detecting structures CdTe, CdZnTe
  6. performances MPM and r-r-r-detecting structures
  7. measuring of spectrometer performances of detecting structures from CdTe and CdZnTe
  8. the review of materials for manufacturing of the obmenno-related structures
  9. the analysis of manufacturing techniques of detectors of an ionising radiation on the basis of CdTe, CdZnTe
  10. Chapter 2. Economic and technological aspects RKRT
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