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Temperature dependences of an inductivity and the dielectric losses

In operations [114,115] dependence of the dielectric testimonials from of a thickness of the films, gained sol-gel was explored by a method. The composition with element relation Zr/Ti = 52/48 was explored.

It has observationally been erected, that the peak values of an inductivity are proper in films in the thickness from 320 nanometers and above, drawing 1.12. At a room temperature value ε made ~ 1300. Value of residual polarisation was made 36 мкКл/см2, and a coercive field of the order by of 30 kv/sm

Drawing. 1.12 - Dependences of quantity ε and tg δ from a thickness of a film and from temperature it agree [114, 115]

Also temperature influence otzhiga on temperature Kjuri is shown: with magnification Totzh temperature Kjuri moves in field of heats drawing 1.13. The behaviour of dependence of a complex dielectric constant had more strongly pronounced extreme character for films, otzhigavshihsja at the peak values, - for the given experiment it is temperature made 700 °s.

Drawing 1.13 - Dependences of a complex dielectric constant on frequency

Measuring field, from temperature otzhiga [115]

The temperature of phase transition for films, otozhzhennyh at temperature 700 °s, made 366 °s. Influence of frequency of a measuring field on transition temperature missed.

In operation [38] films with element relation Zr/Ti = 65/35, gained by a method of pulsing laser sedimentation were explored. Films otzhigalis initiatingly at 450 oC in fluxion of 5 hours, and then even 2 hours at 650 °s. The basic dielectric performances are mapped in drawing 1.14. Values of residual polarisation and a coercive field made Pr = 25 мКл/см2 and Ec = 43 sq./see inappreciable internal field of the order of 2 kv/sm that relate to distinction of electrodes. Temperature measurings of an inductivity and the dielectric losses were spent on frequency 100 kgts. Temperature Kjuri spotted as 300 oC has appeared less on 25 °s, than at the films of a similar composition explored earlier [116]. Authors relate such distinction to effect of a Schottky barrier. Authors relate high enough values of an inductivity to the major size of grains which made 0,5 microns while in the similar objects having the size of grains about 0,1 microns a complex dielectric constant was less twice.

Drawing 1.14 Loops of the dielectric hysteresis and dependence dielektrichesyo

Which stationary value and the dielectric losses from temperature for a composition film

Zr/Ti = 6535 [3 8]

The group under the guidance of JAmazaki explored thermal properties of films TSTS, a composition of close to MFG, synthesised sol-gel a method with the help the expert of a calorimetry [117]. For films about relation Zr/Ti = 50/50 the heat capacity hysteresis between heating and cooling cycles took place. At magnification of share Zr to 52 % the hysteresis was recasted, change of a specific heat capacity was reduced at direct and reverse motion of measurings.

For composition TSTS relation Zr/Ti = 54/46 hysteresis of a heat capacity resembled the dielectric, and quasi-stationary values of a heat capacity were observed at a heating and cooling, together with it stretching a hysteresis on abscissa axes, drawing 1.15. For a composition with a relation 50/50 temperature of transition made 384 0C at a heating and cooling. For composition Zr/Ti = 52/48 phase transition was observed at 390 0C at a stage of a heating and 384 0C at cooling. Phase transition in films of composition Zr/Ti = 54/46 is in a special way oozed, there transition comes at 428 0C degrees at heating and 398 0C at cooling.

Drawing 1.15 Dependence of a specific heat capacity on temperature, for thin films TSTS relation Zr/Ti = 54/46 [117].

Drawing 1.16 - the Incorporated phase diagramme of firm solutions TSTS according to measurings of temperature of transition, means the expert of a calorimetry, at a heating and cooling [117]

According to effects of a calorimetry, authors had been compared the gained effects with already available data of phase diagrammes, drawing 1.16.

In operation [118] effects of examination of elastic moduluses (the module the Ship's boy and a shear modulus) and the interior friction Q1, measured as function from temperature from-180 0C to 500 0C in not alloyed ferroelectric ceramics TSTS in kilogertsovom a gamut and on low frequencies (from 0,1 to 1 Hz) are gained. New phase transition on morfotropnoj to boundary at low temperatures was spotted from an elastic modulus minimum. An inductivity ε and the dielectric losses tg δ were measured in a frequency band from 20 Hz to 10 kgts. Both mechanical, and electrical measurings allowed to observe relaxation peaks in a ferroelectric phase. Curves Arreniusa show, that it is possible to explore these relaxation processes with use of the given observational methods.

In operation [119] the inductivity, and also dependences of a current of switching in films TSTS by thickness of 250 nanometers for three values "h" in region MFG - 0.46, 0.48, 0.49 in the range of temperatures from-193 0C to 360 0C was explored. The characteristic frequency variance for phase transition is revealed at low temperatures. Transition through MFG on temperature dependences for samples from shares of the titan 0.46, 0.48, 0.49 is spotted at 183 0C, 52 0C,-38 0C accordingly, under condition of carrying out of the dielectric measurings on frequency 50 kgts. Also authors have found out the frequency variance of peak value ε ", related to transition through MFG which can be featured the law Fogelja - Fulchera with terminating value of" freezing temperature ». Temperatures of freezing for films with"h"= 0.46, 0.48, 0.49 are spotted as 36.6 0C,-78.1 0C, - 90,8 0C accordingly. According to authors, the frequency variance between transition temperature through MFG and freezing temperature it is possible to explain coexistence between tetragonal and romboedricheskoj 2 phases, including monoclinic (drawing 1.17). The current of switching measured in different controlling fields, will well be compounded with the model offered Ishibashi [120] and characterised nizkorazmernoj by the nature of dynamics of domain boundaries in
Films TSTS. Also authors have found out, that the density of the peak switched current in the perpetual floor has a plateau, in the field of transition through MFG, that reflects saturation polarisation. Decrease in a field of the activation, observed at transition through MFG, can be caused magnification of probability of coexistence of phases that leads to local oscillations of polar directions close morfotropnoj boundaries. These effects correspond to the low-temperature phase transitions in thin films TSTS for concentrations, close to MFG.

Drawing 1.17 h-t the phase diagramme in neighbourhood MFG for Pb (Zr1.xTix) O3 thin films. By points are scored: T0 - the temperatures calculated on the basis of law Fogelja-Fulchera, a Tlи Tl ' - the temperatures of phase transition corresponding oblique MFG, gained on the basis of the dielectric measurings and measurings of a current of switching, accordingly [119 Sheen, 2003]

1.7

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A source: Kanarejkin Alexey Gennadevich. Ferroelectric properties nanostrukturirovannyh systems on a bottom tsirkonata-titanata lead. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences. St.-Petersburg - 2018. 2018

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